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A Numerical Simulation of C3N Nanoribbon-Based Field-Effect Transistors.

Authors :
Zhang, Tiancheng
Zeng, Hui
Ding, Dazhi
Chen, R. S.
Source :
IEEE Transactions on Electron Devices. Feb2019, Vol. 66 Issue 2, p1087-1091. 5p.
Publication Year :
2019

Abstract

In this paper, the electron transport properties of a C3N nanoribbon-based field-effect transistor (FET) in the ballistic regime have been simulated. Using the density-functional theory (DFT) to obtain the band structures, we found that the armchair-edged C3N nanoribbons are semiconductors, and their bandgaps are determined by their widths, while the zigzag-edged ribbons present the metallic properties. We have carried out calculations to study the transport properties of armchair-edged C3N nanoribbon by using DFT combined with the nonequilibrium Green’s function. Our simulation results revealed that both bandgap and current on/off ratio are reduced as the width increasing. Moreover, the gate length, channel length, and ribbon’s width are found to have prominent influences on the transfer characteristics. The armchair-edged C3N nanoribbon-based FETs have the highest current on/off ratio of 106 and the ideal subthreshold swing of 61.2 mV/dec, which make it promising for potential applications of FET. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189383
Volume :
66
Issue :
2
Database :
Academic Search Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
134552105
Full Text :
https://doi.org/10.1109/TED.2018.2883298