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Transadmittance Efficiency Under NQS Operation in Asymmetric Double Gate FDSOI MOSFET.
- Source :
-
IEEE Transactions on Electron Devices . Jan2019, Vol. 66 Issue 1, p300-307. 8p. - Publication Year :
- 2019
-
Abstract
- The state-of-the-art RF and millimeter-wave circuits design requires accurate prediction of the nonquasi-static (NQS) effects at high frequency for all levels of channel inversion. This paper provides a practical insight to help high-frequency performance assessment of ultrathin body and box fully depleted silicon-on-insulator MOSFETs through a powerful frequency normalization scheme. Frequency dependence of small signal characteristics derived from experimental S-parameters is analyzed and reveals that the transconductance efficiency (${g}_{\textsf {m}}/{I}_{\textsf {D}}$) concept, already adopted as a low-frequency analog figure-of-merit (FoM), can be generalized to high frequency, including under asymmetric operation. We report that the normalized frequency dependence of the generalized transadmittance efficiency (${y}_{\textsf {m}}/{I}_{\textsf {D}}$) FoM only depends on the mobility and inversion coefficient. In addition, this approach is also used to extract essential parameters such as the critical NQS frequency ${f}_{\textsf {NQS}}$. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 137215197
- Full Text :
- https://doi.org/10.1109/TED.2018.2882539