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Investigation of the Trap States and $V_{\text{TH}}$ Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer.
- Source :
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IEEE Transactions on Electron Devices . Aug2019, Vol. 66 Issue 8, p3290-3295. 6p. - Publication Year :
- 2019
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Abstract
- A novel gate and passivation dielectric stack consisting of a thin metal-organic chemical vapor deposition (MOCVD) grown in-situ Si3N4 (3 nm) and a thick low-pressure chemical vapor deposition (LPCVD) grown Si3N4 (30 nm) in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT) is proposed. The quality of the Si3N4/(Al)GaN interface and the effect on threshold voltage (${V}_{\text {TH}}$) instability and dynamic ${R}_{ \mathrm{\scriptscriptstyle ON}}$ in the MIS-HEMTs with/without the in-situ Si3N4 layer are investigated by high-frequency capacitance-voltage (HFCV), quasi-static (QS) ${C}$ – ${V}$ (QSCV), time-of-fly (TOF) stress/measure, and QS ${I}_{\text {D}}$ – ${V}_{\text {DS}}$ methods. It is founded that the in-situ Si3N4 interfacial layer is effective in improving the dielectric/III-N interface morphology. As a result, better ${V}_{\text {TH}}$ stability and lower ${R} _{ \mathrm{\scriptscriptstyle ON},\text {D}}/{R} _{ \mathrm{\scriptscriptstyle ON},\text {S}}$ ratio are observed in devices with the in-situ Si3N4 interfacial layer due to the reduced density of traps close to the dielectric/III-N interface. Time-dependent dielectric breakdown and Weibull performance further verified that the proposed bilayer gate dielectric stack is a promising structure for the high-reliability power transistors. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 138462790
- Full Text :
- https://doi.org/10.1109/TED.2019.2919246