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Plasma Charge Accumulative Model in Quantitative FinFET Plasma Damage.
- Source :
-
IEEE Transactions on Electron Devices . Aug2019, Vol. 66 Issue 8, p3492-3497. 6p. - Publication Year :
- 2019
-
Abstract
- A novel plasma Charge Accumulative Model (pCAM) by calculating time-integrated Fowler–Nordheim (FN) tunneling charges and field of the gate dielectric in plasma processes is proposed in this paper. Our prior studies have developed and presented a quantitative FinFET plasma recording device by an effective fin-shaped field effect transistor (FinFET) contact-to-metal coupling structure to record and quantify plasma ion charges created in FinFET backend processes. In this paper, a precise analytical model is proposed to model the magnitude of plasma ion charges, time-integrated stressing field, and the criteria of the plasma process for optimum FinFET process technology. The new pCAM is highly matching with the measurement result of 16- and 7-nm FinFET wafers. The model can be adapted to practically estimate the plasma damage with different charge types, process parameters, and ion distribution; it can optimize the FinFET process and further understand the plasma damage mechanism in charging processes of 7-nm FinFET and beyond. [ABSTRACT FROM AUTHOR]
- Subjects :
- *FIELD-effect transistors
*PLASMA devices
*QUANTUM gates
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 138462798
- Full Text :
- https://doi.org/10.1109/TED.2019.2919454