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Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3.
- Source :
-
IEEE Transactions on Electron Devices . Nov2019, Vol. 66 Issue 11, p4617-4622. 6p. - Publication Year :
- 2019
-
Abstract
- This paper presents a modeling approach to simulate the impact of total ionizing dose (TID) degradation on low-power analog and mixed-signal circuits. The modeling approach has been performed on 180-nm n-type metal–oxide–semiconductor field-effect transistors (n-MOSFETs). The effects of the finger number, channel geometry, and biasing voltages have been tested during irradiation experiments. All Berkeley short-channel insulated gate field-effect transistor model (BSIM) parameters relevant to the transistor properties affected by TID have been modified in an algorithmic flow to correctly estimate the sub-threshold leakage current for a given dose level. The maximum error of the model developed is below 8%. A case study considering a five-stage ring oscillator is simulated with the generated model to show that the power consumption of the circuit increases and the oscillation frequency decreases around by 14%. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 140084495
- Full Text :
- https://doi.org/10.1109/TED.2019.2926931