A Post-Bond TSV Test Method Based on RGC Parameters Measurement.

In this paper, we propose a novel post-bond through-silicon via (TSV) test method for post-bond TSV manufacture test. The proposed method can measure the RGC parameters of TSVs using switched-capacitor circuits and calibration method and detect TSV leakage fault, open fault, high-resistance fault, and delay fault based on the measured RGC parameters. The test process has a high resolution and is robust. The fault-detection effectiveness is evaluated via HSPICE simulations. The results of the TSV capacitance measurement have a relative error within 1%, the TSV resistance measurement results have a relative error within 5%, and the TSV conductance measurement results have a relative error within 8.5%. We also perform an Monte Carlo simulation to prove that even under process variation, the proposed method can obtain a TSV capacitance within an absolute error of ±3 fF, obtain a TSV resistance with a relative error of no more than 18.4%, and obtain a TSV conductance of less than 100 ${\mu \Omega }^{{-1}}$ with a relative error of no more than 13%. [ABSTRACT FROM AUTHOR]