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The use of electroless copper seed in electrochemical deposited copper interconnect
- Source :
-
Thin Solid Films . Sep2004, Vol. 462/463, p275-278. 4p. - Publication Year :
- 2004
-
Abstract
- Copper (Cu) electroplating (EP) process requires a Cu seed to conduct the current. Conventional physical vapor deposition (PVD) seed suffers from poor step coverage while chemical vapor deposition (CVD) seed is cost-ineffective. We therefore propose the use of electroless (EL) technique as a Cu seed deposition method and demonstrate its integration with conventional Cu EP. The EL seed has excellent step coverage which when combined with the bottom-up fill capability of additives-based EP process, produces void-free fill. The EL seed-EP Cu film stack has good resistivity, roughness and acceptable (111) texture. However, some adhesion issues remain to be solved for this integration scheme. [Copyright &y& Elsevier]
- Subjects :
- *COPPER
*ELECTROPLATING
*CHEMICAL vapor deposition
*THIN films
Subjects
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 462/463
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 14609269
- Full Text :
- https://doi.org/10.1016/j.tsf.2004.05.100