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Development of a novel high speed (electron-mobility) epi-n-ZnO thin films by L-MBE for III–V opto-electronic devices
- Source :
-
Current Applied Physics . Nov2004, Vol. 4 Issue 6, p679-684. 6p. - Publication Year :
- 2004
-
Abstract
- Intrinsic epitaxial zinc oxide (epi-ZnO) thin films were grown by laser-molecular beam epitaxy (L-MBE), i.e., pulsed laser deposition (PLD) technique using Johnson Matthey “specpure”-grade ZnO pellets. The effects of substrate temperatures on ZnO thin film growth, electrical conductivity (<f>σ</f>), mobility (<f>μ</f>) and carrier concentration (<f>n</f>) were studied. As well as the feasibility of developing high quality conducting oxide thin films was also studied simultaneously. The highest conductivity was found for optimized epi-ZnO thin films is <f>σ=0.06×103</f> ohm-1 cm-1 (n-type) (which is almost at the edge of semiconductivity range), carrier density <f>n=0.316×1019</f> cm-3 and mobility <f>μ=98</f> cm2/V s. The electrical studies further confirmed the semiconductor characteristics of epi-n-ZnO thin films. The relationship between the optical and electrical properties were also graphically enumerated. The electrical parameter values for the films were calculated, graphically enumerated and tabulated. As a novelty point of view, we have concluded that without doping and annealing, we have obtained optimum electrical conductivity with high optical transparency (⩾95%) for as deposited ZnO thin films using PLD. Also, this is the first time that we have applied PLD made ZnO thin films to iso-, hetero-semiconductor–insulator–semiconductor (SIS) type solar cells as transparent conducting oxide (TCO) window layer. We hope that surely these data be helpful either as a scientific or technical basis in the semiconductor processing. [Copyright &y& Elsevier]
- Subjects :
- *ZINC oxide
*EPITAXY
*ZINC oxide thin films
*SEMICONDUCTORS
Subjects
Details
- Language :
- English
- ISSN :
- 15671739
- Volume :
- 4
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Current Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 14647317
- Full Text :
- https://doi.org/10.1016/j.cap.2004.04.001