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Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage.

Authors :
Li, Panpan
Zhang, Haojun
Li, Hongjian
Zhang, Yuewei
Yao, Yifan
Palmquist, Nathan
Iza, Mike
Speck, James S
Nakamura, Shuji
DenBaars, Steven P
Source :
Semiconductor Science & Technology. Dec2020, Vol. 35 Issue 12, p1-5. 5p.
Publication Year :
2020

Abstract

High performance GaN-based micro-light-emitting diodes (µLEDs) with epitaxial n-InGaN/n-GaN tunnel junctions (InGaN TJs) were grown by metalorganic chemical vapor deposition (MOCVD). The InGaN TJs µLEDs show a significant reduction of forward voltage (Vf) by ∼0.6 V compared to the common TJs µLEDs. The Vf at 20 A cm−2 is very low varied from 3.15 V to 3.19 V in small InGaN TJ µLEDs with a size less than 40 × 40 µm2, and then significantly increases in large LEDs. Selective area growth (SAG) of TJs can overcome such size limitation by vertical out diffusion of hydrogen through the apertures on top of p-GaN. The InGaN TJ µLEDs overgrown by SAG show a size-independent low Vf ranged from 3.08 V to 3.25 V. The external quantum efficiency (EQE) of the packaged TJ µLEDs was improved by 6% compared to the common µLEDs with indium tin oxide (ITO) contact. This work solves the key challenges of MOCVD-grown TJs. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
02681242
Volume :
35
Issue :
12
Database :
Academic Search Index
Journal :
Semiconductor Science & Technology
Publication Type :
Academic Journal
Accession number :
149122740
Full Text :
https://doi.org/10.1088/1361-6641/abbd5b