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Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage.
- Source :
-
Semiconductor Science & Technology . Dec2020, Vol. 35 Issue 12, p1-5. 5p. - Publication Year :
- 2020
-
Abstract
- High performance GaN-based micro-light-emitting diodes (µLEDs) with epitaxial n-InGaN/n-GaN tunnel junctions (InGaN TJs) were grown by metalorganic chemical vapor deposition (MOCVD). The InGaN TJs µLEDs show a significant reduction of forward voltage (Vf) by ∼0.6 V compared to the common TJs µLEDs. The Vf at 20 A cm−2 is very low varied from 3.15 V to 3.19 V in small InGaN TJ µLEDs with a size less than 40 × 40 µm2, and then significantly increases in large LEDs. Selective area growth (SAG) of TJs can overcome such size limitation by vertical out diffusion of hydrogen through the apertures on top of p-GaN. The InGaN TJ µLEDs overgrown by SAG show a size-independent low Vf ranged from 3.08 V to 3.25 V. The external quantum efficiency (EQE) of the packaged TJ µLEDs was improved by 6% compared to the common µLEDs with indium tin oxide (ITO) contact. This work solves the key challenges of MOCVD-grown TJs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02681242
- Volume :
- 35
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Semiconductor Science & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 149122740
- Full Text :
- https://doi.org/10.1088/1361-6641/abbd5b