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An ultrathin-barrier AlGaN/GaN heterostructure: a recess-free technology for the fabrication and integration of GaN-based power devices and power-driven circuits.
- Source :
-
Semiconductor Science & Technology . Apr2021, Vol. 36 Issue 4, p1-12. 12p. - Publication Year :
- 2021
-
Abstract
- An AlGaN-recess-free, ultrathin-barrier (UTB) AlGaN (<6 nm)/GaN heterostructure is presented for the fabrication and integration of AlGaN/GaN enhancement/depletion-mode (E/D-mode) heterojunction field-effect transistors (HFETs), and metal–insulator-semiconductor HFETs (MIS-HFETs). The 2D electron gas in the access region of the UTB-AlGaN/GaN (MIS)HFETs can effectively be recovered by a low-pressure chemical-vapor-deposited SiNx passivation layer (LPCVD-SiNx), which is capable of introducing about 2.75 × 1013 cm−2 positive fixed charges at the LPCVD-SiNx/(Al)GaN interface. LPCVD-SiNx can also serve as a good gate insulator for D-mode MIS-HFETs. Using the self-terminating etching of LPCVD-SiNx on III-nitride as well as a low-damage remote plasma pretreatment, high uniformity E-mode HFETs and low-hysteresis E-mode MIS-HFETs have been fabricated using the GaN-on-Si platform. E/D-mode MIS-HFET inverters with a large logic swing have also been demonstrated on this platform. The UTB-AlGaN/GaN heterostructure is an attractive technology platform for the on-chip integration of power and RF devices with power-driven circuits for GaN-based smart power integrated circuits. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02681242
- Volume :
- 36
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Semiconductor Science & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 149589989
- Full Text :
- https://doi.org/10.1088/1361-6641/abd2fe