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AlGaN-based UV-B laser diode with a high optical confinement factor.
- Source :
-
Applied Physics Letters . 4/28/2021, Vol. 118 Issue 16, p1-6. 6p. - Publication Year :
- 2021
-
Abstract
- To reduce the threshold current density (Jth) of ultraviolet (UV)-B AlGaN-based laser diodes, we investigated the critical parameters aiming to increase the injection efficiency ηi and the optical confinement factor Γ. Optimization of the thickness of the waveguide layer, the average Al content of the p-type AlGaN cladding layer, and the film thickness of the cladding layer demonstrated that the device characteristics can be improved. This optimization achieved a reduction in Jth to 13.3 kA cm−2 at a lasing wavelength of 300 nm, thus offering the lowest Jth value yet achieved for a UV-B laser diode. [ABSTRACT FROM AUTHOR]
- Subjects :
- *WAVELENGTHS
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 118
- Issue :
- 16
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 150022555
- Full Text :
- https://doi.org/10.1063/5.0046224