Back to Search
Start Over
8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer.
- Source :
-
Applied Physics Letters . 1/31/2022, Vol. 120 Issue 5, p1-5. 5p. - Publication Year :
- 2022
-
Abstract
- In this work, high-performance millimeter-wave AlGaN/GaN structures for high-electron-mobility transistors (HEMTs) are presented using a Si-rich SiN passivation layer. The analysis of transient and x-ray photoelectron spectroscopy measurements revealed that the presence of the Si-rich SiN layer leads to a decrease in the deep-level surface traps by mitigating the formation of Ga–O bonds. This results in a suppressed current collapse from 11% to 5% as well as a decreased knee voltage (Vknee). The current gain cutoff frequency and the maximum oscillation frequency of the devices with the Si-rich SiN layer exhibit the values of 74 and 140 GHz, respectively. Moreover, load-pull measurements at 30 GHz show that the devices containing the Si-rich SiN deliver excellent output power density of 8.7 W/mm at Vds = 28 V and high power-added efficiency up to 48% at Vds = 10 V. The enhanced power performance of HEMTs using Si-rich SiN interlayer passivation is attributed to the reduced Vknee, the suppressed current collapse, and the improved drain current. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 120
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 155079766
- Full Text :
- https://doi.org/10.1063/5.0080120