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Preparation and characteristics of the wide gap semiconductor Mg0.18Zn0.82O thin film by L-MBE
- Source :
-
Microelectronics Journal . Feb2005, Vol. 36 Issue 2, p125-128. 4p. - Publication Year :
- 2005
-
Abstract
- Abstract: The high purity ZnO ceramic target and the (MgO)0.1(ZnO)0.9 target were fabricated. The wurtzite-phase ZnO thin film and ternary MgxZn1-xO thin film were grown on sapphire (0001) substrates by laser molecular beam epitaxy (L-MBE) from the sintered ceramic targets separately. The films'' transmittance spectra at room temperature for the ZnO film and the MgxZn1-xO film were measured and compared while their room temperature photoluminescence spectra were done. The band-gap modulation is realized from 3.31eV for the ZnO film to 3.64eV for the MgxZn1-xO alloy film. The Mg content x in the MgxZn1-xO alloy film was determined to be 0.18. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00262692
- Volume :
- 36
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Microelectronics Journal
- Publication Type :
- Academic Journal
- Accession number :
- 15670038
- Full Text :
- https://doi.org/10.1016/j.mejo.2004.11.005