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Effects of Layer-to-Layer Coupling on the Total-Ionizing-Dose Response of 3-D-Sequentially Integrated FD-SOI MOSFETs.
- Source :
-
IEEE Transactions on Nuclear Science . Jul2022, Vol. 69 Issue 7, p1420-1427. 8p. - Publication Year :
- 2022
-
Abstract
- Total-ionizing-dose (TID) responses are investigated for 3-D-sequentially integrated fully depleted silicon-on-insulator (FD-SOI) MOSFETs. Strong layer-to-layer coupling of TID response is observed. The simultaneous application of positive bias to the gate of the bottom-layer device and negative bias to the top-layer device leads to the maximum enhancement of positive charge trapping in the top-layer device and the intermediate dielectric layer. This enhancement is due to the upward-directed electric field in the intermediate dielectric layer under these bias conditions. In contrast, electrostatic shielding prevents the gate bias of the top-layer device from affecting the response of the bottom-layer device, as confirmed by experiments and technology computer-aided design (TCAD) simulations. Effects of layer-to-layer coupling are less significant for postirradiation-biased annealing. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 69
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 158023040
- Full Text :
- https://doi.org/10.1109/TNS.2021.3138020