Measurement of secondary electron emission coefficient of plane target in plasma immersion ion implantation.

This paper describes in-process measurements of secondary electron emission coefficient (SEEC) during plasma immersion ion implantation for a plane target. In the plane target, trajectories of secondary electrons (SEs) emitted from the target strongly depend on the plasma conditions as well as the amplitude of pulse voltages applied to the target because of variation of the curvature radius of the sheath formed around the target. Therefore, absolute measurements of the SE current as well as of the SEEC were difficult to perform. However, calibration of an SE detector using a plane target with very high SEEC enabled the SEEC measurements. The measurements of the SE current revealed that the sheath curvature was affected by the plasma condition and the target shape. This calibration will be useful for SEEC measurements of arbitrary-shaped target. © 2005 Wiley Periodicals, Inc. Electr Eng Jpn, 151(3): 1–7, 2005; Published online in Wiley InterScience (<URL>www.interscience.wiley.com</URL>). DOI 10.1002/eej.20096 [ABSTRACT FROM AUTHOR]