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Thermoelectric transport properties of Si, SiGe, and silicide CMOS-compatible thin films.
- Source :
-
Review of Scientific Instruments . Oct2023, Vol. 94 Issue 10, p1-6. 6p. - Publication Year :
- 2023
-
Abstract
- Characterization of thermoelectric transport properties for temperature sensing, cooling, and energy harvesting applications is necessary for a reliable device performance in progressively minimized computer chips. In this contribution, we present a fully automated thermovoltage and sheet resistance measurement setup, which is calibrated and tested for the production of silicon- and silicon-germanium-doped as well as silicide complementary metal–oxide–semiconductor-compatible thin films. A LabVIEW-programmed software application automatically controls the measurement and recording of thermovoltages at individually defined temperature set points. The setup maps average temperature and temperature differences simultaneously in the regime from 40 to 70 °C. The Seebeck coefficient calculated by means of the inversion method was used to eliminate the offset voltage influence. Finally, we present and discuss the Seebeck coefficient as well as the sheet resistance for application-specific different temperature set points of several doped poly-Si, poly-SiGe, and silicides. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00346748
- Volume :
- 94
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Review of Scientific Instruments
- Publication Type :
- Academic Journal
- Accession number :
- 173362043
- Full Text :
- https://doi.org/10.1063/5.0164172