Back to Search
Start Over
Si0.85Ge0.15 oxynitridation in wet-nitric oxide ambient
- Source :
-
Microelectronic Engineering . Apr2005, Vol. 77 Issue 3/4, p242-249. 8p. - Publication Year :
- 2005
-
Abstract
- Abstract: Nitric oxide (NO) aided Si0.85Ge0.15 wet-oxynitridation has been performed at 400–700 °C, while the wet-NO feed gas was preheated to higher temperatures before entering the reaction zone. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy data suggests that both nitrogen and oxygen incorporation increases within the dielectric bulk with increasing wet-oxynitridation temperature, while there is no apparent germanium segregation towards the dielectric/substrate interface at all temperatures studied. Moreover, angle-resolved XPS analysis suggests that wet-oxynitridation at temperatures higher than 600 °C volatilizes some germanium oxide from the surface region, while silicon monoxide is outgassed from the dielectric bulk and accumulates near the surface. Nitrogen incorporation is found to hinder germanium segregation. Z-contrast imaging with scanning transmission electron microscopy shows that oxynitrides grown in wet-NO have sharp interfaces with bulk Si0.85Ge0.15, while the roughness of the dielectric/Si0.85Ge0.15 substrate interface is less than 2 Å. These results are discussed in the context of an overall mechanism of SiGe wet-oxynitridation. [Copyright &y& Elsevier]
- Subjects :
- *SILICON
*NITRIC oxide
*X-ray photoelectron spectroscopy
*GERMANIUM
Subjects
Details
- Language :
- English
- ISSN :
- 01679317
- Volume :
- 77
- Issue :
- 3/4
- Database :
- Academic Search Index
- Journal :
- Microelectronic Engineering
- Publication Type :
- Academic Journal
- Accession number :
- 17612362
- Full Text :
- https://doi.org/10.1016/j.mee.2004.11.006