High mobility and hysteresis free InGaSnO thin film transistors by co-sputtering via low temperature post annealing process.

• InGaSnO thin film transistors (TFTs) with high mobility (>50 cm2/Vs) were prepared. • Gallium doping improves the electrical performance and stability of InGaSnO TFTs. • The thermal budget can be controled below 150 ℃ without other equipment and process. • Oxygen vacancy and interfacial defect density can be reduced by gallium doping. In this work, InGaSnO thin film transistors (TFTs) with high mobility (>50 cm2/Vs) were prepared by a simple co-sputtering process at a low temperature of 150 ℃. In the co-sputtering process of InSnO and Ga 2 O 3 , the composition of InGaSnO can be reasonably controlled by adjusting the sputtering power in the radio frequency plasma, which significantly affects the electrical performance and stability of InGaSnO TFTs. The highly overlapping 5 s electron cloud of In and Sn and the high binding energy of Sn-O lay the foundation for the high mobility of InGaSnO TFTs. The defects related to oxygen in the channel are suppressed by the reasonable control of the composition of Ga in the multicomponent oxides. Meanwhile, the interface defects between the gate dielectric and the active layer are reduced, and a dense metal-oxygen-metal network is formed which is conducive to electron transmission. We have achieved an InGaSnO TFTs with mobility of 58.7 cm2/Vs and threshold voltage of -1.33 V. The stability under positive and negative bias stress is also significantly improved. In general, a simple co-sputtering process is entirely feasible to realize high-mobility oxide TFTs. The control of the process temperature below 150 ℃ also extends its application in flexible electronic devices. [ABSTRACT FROM AUTHOR]