Publisher's Note: "Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors" [Appl. Phys. Lett. 123, 262107 (2023)].

Authors :: Wang, Yingjie
Huang, Sen
Jiang, Qimeng
Wang, Xinhua
Ji, Zhongchen
Fan, Jie
Yin, Haibo
Wei, Ke
Liu, Xinyu
Sun, Qian
Chen, Kevin J.
Source :: Applied Physics Letters. 4/8/2024, Vol. 124 Issue 15, p1-1. 1p.
Publication Year :: 2024
Abstract: This article was originally published online on 27 December 2023 with an error in the affiliation. The affiliation appears correct above. All online versions of this article were corrected on 4 April 2024.By Yingjie Wang; Sen Huang; Qimeng Jiang; Xinhua Wang; Zhongchen Ji; Jie Fan; Haibo Yin; Ke Wei; Xinyu Liu; Qian Sun and Kevin J. ChenReported by Author; Author; Author; Author; Author; Author; Author; Author; Author; Author; Author [Extracted from the article]

Subjects :: *FIELD-effect transistors
*HETEROSTRUCTURES
*MODULATION-doped field-effect transistors
*GASES

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