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High-performance and low-power consumption deep UV photodetectors based on MOCVD-grown ZnGa2O4epilayers with high temperature functionality.

Authors :
Khan, Taslim
Sheoran, Hardhyan
Tarntair, Fu-Gow
Horng, Ray-Hua
Singh, Rajendra
Source :
Materials Science in Semiconductor Processing. Aug2024, Vol. 179, pN.PAG-N.PAG. 1p.
Publication Year :
2024

Abstract

This work reports on the fabrication of excellent quality deep ultraviolet photodetectors (DUV PDs) based on metalorganic chemical vapor deposition (MOCVD) grown spinel ZnGa 2 O 4 thin films on c-plane sapphire. Herein, The DUV PDs by exhibiting an ultra-low dark current of 6.69 f A and a high photo-to-dark-current ratio (PDCR) of >108 at a low-power operation of 0.2 V. While PDCR reached more than 109 on applied bias of 10 V having extremely low dark current of 37 fA. The detector revealed an ultra-high responsivity of 185 and 3.53 A/W under the exposure of 107 μW/cm2 of 245 nm wavelength at room temperature (RT) and applied bias of 10 and 0.2 V, respectively, and exhibited the record-high detectivity of the order of 1017 Jones. The temperature-dependent operation remained stable across a wide temperature range, from 27 °C to 125 °C, maintaining ultra-low dark current. The nearly constant growth and decay time of DUV PDs throughout the temperature range emphasizes the robustness and reliability of PD. The ideality factor in both DUV and dark conditions nearing unity proves the dominance of the thermionic emission mechanism. Also shows the stable and slight improved performance after a year. Therefore, these findings suggest that ZnGa 2 O 4 is a strong contender for deep UV detection that shows robustness even at high temperatures. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
13698001
Volume :
179
Database :
Academic Search Index
Journal :
Materials Science in Semiconductor Processing
Publication Type :
Academic Journal
Accession number :
177514929
Full Text :
https://doi.org/10.1016/j.mssp.2024.108418