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Electrical Characteristics of 8-Å EOT Hf02/TaN Low Thermal-Budget n-Channel FETs With Solid-Phase Epitaxially Regrown Junctions.
- Source :
-
IEEE Transactions on Electron Devices . Jul2006, Vol. 53 Issue 7, p1657-1668. 12p. 15 Black and White Photographs, 1 Diagram, 2 Charts, 9 Graphs. - Publication Year :
- 2006
-
Abstract
- The authors demonstrate high-performing n-channel transistors with a HfO2/TaN gate stack and a low thermal-budget process using solid-phase epitaxial regrowth of the source and drain junctions. The thinnest devices have an equivalent oxide thickness (EOT) of 8 Å, a leakage current of 1.5 A/cm² at VG = 1 V, a peak mobility of 190 cm²/V · s, and a drive-current of 815 μA/μm at an OFF-state current of 0.1 μA/μm for VDD = 1.2 V. Identical gate stacks processed with a 1000-°C spike anneal have a higher peak mobility at 275 cm²/V · s, but a 5-Å higher EOT and a reduced drive current at 610 μA/μm. The observed performance improvement for the low thermal-budget devices is shown to be mostly related to the lower EOT. The time-to-breakdown measurements indicate a maximum operating voltage of 1.6 V (1.2 V at 125 °C) for a ten-year lifetime, whereas positive-bias temperature-instability :measurements indicate a sufficient lifetime for operating voltages below 0.75 V. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 53
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 21383956
- Full Text :
- https://doi.org/10.1109/TED.2006.876274