Back to Search
Start Over
Monolithically Integrated Enhancement/Depletion-Mode A1GaN/GaN HEMT Inverters and Ring Oscillators Using CF4 Plasma Treatment.
- Source :
-
IEEE Transactions on Electron Devices . Sep2006, Vol. 53 Issue 9, p2223-2230. 8p. 5 Black and White Photographs, 4 Diagrams, 4 Charts, 7 Graphs. - Publication Year :
- 2006
-
Abstract
- Fabrication and characterization of AlGaN/GaN HEMT inverters and ring oscillators utilizing integrated enhancement/depletion-mode (E/D-mode) AlGaN/GaN HEMTs are presented. The core technique is a CF4 plasma treatment that can effectively convert a D-mode AlGaN/GaN heterostructure to an E-mode heterostructure. A significant advantage of the plasma-treated E-mode HEMTs is that the gate current is reduced in both reverse- and forward-bias regions due to the effectively enhanced barrier height induced by the negatively charged fluorine ions in the AlGaN barrier. As a result, the input voltage swing is expanded by about 1 V for the E-mode HEMT, enabling convenient input/output logic level matching for multistage logic circuits such as ring oscillators. The fabricated 17-stage direct-coupled field-effect transistor logic ring oscillator using the 1-μm-gate technology can operate properly at a larger supply voltage of 3.5 V, and a minimum propagation delay of 130 ps/stage is achieved. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 53
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 22676611
- Full Text :
- https://doi.org/10.1109/TED.2005.881002