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DC and RF Characteristics of A1GaN/GaN/InGaN/GaN Double-Heterojunction HEMTs.
- Source :
-
IEEE Transactions on Electron Devices . Jan2007, Vol. 54 Issue 1, p2-10. 9p. 11 Diagrams. - Publication Year :
- 2007
-
Abstract
- We present the detailed dc and radio-frequency characteristics of an Al0.3Ga0.7N/GaN/In0.1Ga0.9N/GaN double-heterojunction HEMT (DH-HEMT) structure. This structure incorporates a thin (3 nm) In0.1Ga0.9N notch layer inserted at a location that is 6-nm away from the AlGaN/GaN heterointerface. The In0.1Ga0.9N layer provides a unique piezoelectric polarization field which results in a higher potential barrier at the backside of the two-dimensional electron gas channel, effectively improving the carrier confinement and then reducing the buffer leakage. Both depletion-mode (D-mode) and enhancement-mode (E-mode) devices were fabricated on this new structure. Compared with the baseline AlGaN/GaN HEMTs, the DH-HEMT shows lower drain leakage current. The gate leakage current is also found to be reduced, owing to an improved surface morphology in InGaN-incorporated epitaxial structures. DC and small- and large-signal microwave characteristics, together with the linearity performances, have been investigated. The channel transit delay time analysis also revealed that there was a minor channel in the InGaN layer in which the electrons exhibited a mobility slightly lower than the GaN channel. The E-mode DH-HEMTs were also fabricated using our recently developed CF4-based plasma treatment technique. The large-signal operation of the E-mode GaN-based HEMTs was reported for the first time. At 2 GHz, a 1 × 100 μm E-mode device demonstrated a maximum output power of 3.12 W/mm and a power-added efficiency of 49% with single-polarity biases (a gate bias of +0.5 V and a drain bias of 35 V). An output third-order interception point of 34.7 dBm was obtained in the E-mode HEMTs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 54
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 23593706
- Full Text :
- https://doi.org/10.1109/TED.2006.887045