Electric switching and memory devices made from RbAg4I5 films.

Electric switching and memory effects were observed on devices composed of a RbAg4I5 film sandwiched between Ag and Pt electrodes. The RbAg4I5 films were prepared by pulsed laser deposition and the lateral size of devices was scaled down to 300 nm by focused ion beam lithography. The device can be switched between high- and low-resistance states with a ratio of ∼103 by applying voltage with opposite polarities. The read-write cycles could be repeated at 1 kHz and for 104 times. The switching characters are attributed to the formation or breakdown of Ag filaments in RbAg4I5 films induced by electrochemical reactions. [ABSTRACT FROM AUTHOR]