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Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling.
- Source :
-
IEEE Transactions on Electron Devices . Mar2007, Vol. 54 Issue 3, p439-445. 7p. 3 Black and White Photographs, 3 Diagrams, 7 Graphs. - Publication Year :
- 2007
-
Abstract
- The theoretical performance of carbon nanotube field-effect transistors (CNFETs) with Schottky barriers (SBs) is examined by means of a general ballistic model. A novel approach is used to treat the SBs at the metal-nanotube contacts as mesoscopic scatterers by modifying the distribution functions for carriers in the channel. Noticeable current reduction is observed compared to previous ballistic models without SBs. Evanescent- mode analysis is used to derive a scale length and the potential profile near the contacts for radially symmetric CNFET structures. Band-to-band tunneling current and ambipolar conduction are also treated. The effects of different device geometries and different nanotube chiralities on the drain-current are studied using this simple model. Quantum conductance degradation due to SBs is also observed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 54
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 24214310
- Full Text :
- https://doi.org/10.1109/TED.2006.890384