Back to Search
Start Over
High responsivity of GaN p-i-n photodiode by using low-temperature interlayer.
- Source :
-
Applied Physics Letters . 10/22/2007, Vol. 91 Issue 17, p173502. 3p. 4 Graphs. - Publication Year :
- 2007
-
Abstract
- Gallium nitride p-i-n ultraviolet photodiodes with low-temperature (LT)-GaN interlayer have been fabricated. It was found that the dark current of photodiode with LT-GaN interlayer is as small as 143 pA at 5 V reverse bias. It was also found that the responsivity of the photodiode with LT-GaN interlayer can be enhanced at a small electric field (∼0.4 MV/cm) due to the carrier multiplication effect. The UV photocurrent gain of 13 and large ionization coefficient (α=3.1×105 cm-1) were also observed in the detector with LT-GaN interlayer. Furthermore, we can achieve a large peak responsivity of 2.27 A/W from the photodiode with LT-GaN interlayer. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 91
- Issue :
- 17
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 27371078
- Full Text :
- https://doi.org/10.1063/1.2800813