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Performance enhancement of excimer laser crystallized poly-Si thin film transistors with fluorine implantation technology
- Source :
-
Thin Solid Films . Mar2008, Vol. 516 Issue 10, p3128-3132. 5p. - Publication Year :
- 2008
-
Abstract
- Abstract: Polycrystalline silicon thin film transistors (poly-Si TFTs) with the ion implantation of fluorine elements were investigated in this study. The electrical performance and reliability were reported comprehensively. Experimental work has shown the electrical characteristics of excimer laser crystallized F-ions-implanted poly-Si TFTs are improved effectively, especially for field effect mobility. It is also found that the fluorine piled up at the poly-Si interface during thermal annealing, for the TFT fabricated without a prior deposition of pad oxide. The stronger Si–F bonds replace the Si–Si/Si–H, leading to the superior electrical reliability. However, the dose of F ions is critical in poly-Si, or the electrical characteristics of TFT devices will be degraded. [Copyright &y& Elsevier]
- Subjects :
- *POLYCRYSTALS
*THIN films
*TRANSISTORS
*FLUORINE
Subjects
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 516
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 30631815
- Full Text :
- https://doi.org/10.1016/j.tsf.2007.08.038