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Temperature Dependent Minority Electron Mobilities in Strained Si...-...Ge... (0.2 ... x ... 0.4) Layers.
- Source :
-
IEEE Transactions on Electron Devices . Apr2000, Vol. 47 Issue 4, p883. 8p. 2 Black and White Photographs, 3 Charts, 7 Graphs. - Publication Year :
- 2000
-
Abstract
- Deals with the measurement of temperature-dependent minority electron mobilities in p-type SiGe. Fabrication of npn SiGe/Si heterojunction bipolar transistors; Mobility measurement by magnetotransport technique; Mobility measurement by cut-off frequency technique; Conclusion.
- Subjects :
- *ELECTRON mobility
*BIPOLAR transistors
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 47
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 3084773
- Full Text :
- https://doi.org/10.1109/16.831009