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Amorphous ternary rare-earth gate oxides for future integration in MOSFETs
- Source :
-
Microelectronic Engineering . Jul2009, Vol. 86 Issue 7-9, p1646-1649. 4p. - Publication Year :
- 2009
-
Abstract
- Abstract: In this contribution we present results on the structural and electrical properties of amorphous REScO3 (RE =La, Gd, Tb, Sm) and LaLuO3 thin films. The study reveals that these oxides are potential candidates for so-called higher-k dielectrics for forthcoming MOSFET generations. High dielectric constants up to 32, low leakage currents and low interface trap densities are determined for amorphous thin films prepared by pulsed-laser deposition, molecular beam deposition and e-gun evaporation. Moreover, we show that LaLuO3 gate stacks annealed up to 1050°C maintain low leakage current densities without substantial EOT increase. Finally, promising results for n-MOSFETs with GdScO3 as gate dielectric processed on strained silicon-on-insulator substrates are also shown. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 01679317
- Volume :
- 86
- Issue :
- 7-9
- Database :
- Academic Search Index
- Journal :
- Microelectronic Engineering
- Publication Type :
- Academic Journal
- Accession number :
- 40631447
- Full Text :
- https://doi.org/10.1016/j.mee.2009.03.065