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Thermal nitridation of silicon in a cluster tool.
- Source :
-
Applied Physics Letters . 1/20/1992, Vol. 60 Issue 3, p341. 3p. 4 Graphs. - Publication Year :
- 1992
-
Abstract
- Examines the thermal nitridation of silicon (Si) using an integrated cluster tool process described by the growth of Si[sub 3]N[sub 4] thin films. Effects of thermal nitridation on the core-level Si 2p transition; Observation of a valence-band spectrum; Changes in the thermal Si[sub 3]Ni[sub 4] films caused by dry oxygen molecule exposure.
- Subjects :
- *THIN films
*CLUSTER theory (Nuclear physics)
THERMAL properties of semiconductors
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 60
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4240641
- Full Text :
- https://doi.org/10.1063/1.106651