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Thermal nitridation of silicon in a cluster tool.

Authors :
Delfino, M.
Fair, J.A.
Source :
Applied Physics Letters. 1/20/1992, Vol. 60 Issue 3, p341. 3p. 4 Graphs.
Publication Year :
1992

Abstract

Examines the thermal nitridation of silicon (Si) using an integrated cluster tool process described by the growth of Si[sub 3]N[sub 4] thin films. Effects of thermal nitridation on the core-level Si 2p transition; Observation of a valence-band spectrum; Changes in the thermal Si[sub 3]Ni[sub 4] films caused by dry oxygen molecule exposure.

Subjects

Subjects :
*THIN films
*CLUSTER theory (Nuclear physics)
THERMAL properties of semiconductors

Details

Language :
English
ISSN :
00036951
Volume :
60
Issue :
3
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4240641
Full Text :
https://doi.org/10.1063/1.106651
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