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Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices.
- Source :
-
IEEE Transactions on Electron Devices . Aug2009, Vol. 56 Issue 8, p1712-1720. 9p. 2 Diagrams, 9 Graphs. - Publication Year :
- 2009
-
Abstract
- Resistive-switching memory (RRAM) devices are attracting a considerable interest in view of their back-end integration, fast programming, and high scalability. Prediction the programming voltages and currents as a function of the operating conditions is an essential task for developing compact and numerical models able to handle a large number (106-109) of cells within an array. Based on recent experimental findings on the set and reset processes, we have developed physics-based analytical models for the set and reset operations in NiO-based RRAMs. Simulation results obtained by the analytical models were compared with experimental data for variable pulse conditions and were found consistent with data. The set transition is described by a threshold switching process at the broken conductive filament (CF), while the reset transition is viewed as a thermally driven dissolution and/or oxidation of the CF. Set and reset models are finally used for reliability predictions of failure times under constant-voltage stress (read disturb) and elevated-temperature bake (data retention). [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 56
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 43929242
- Full Text :
- https://doi.org/10.1109/TED.2009.2024046