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Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration.
- Source :
-
Applied Physics Letters . 12/4/2000, Vol. 77 Issue 23. - Publication Year :
- 2000
-
Abstract
- A free-standing 300-μm-thick GaN template grown by hydride vapor phase epitaxy has been characterized for its structural and optical properties using x-ray diffraction, defect delineation etch followed by imaging with atomic force microscopy, and variable temperature photoluminescence. The Ga face and the N face of the c-plane GaN exhibited a wide variation in terms of the defect density. The defect concentrations on Ga and N faces were about 5x10[sup 5] cm[sup -2] for the former and about 1x10[sup 7] cm[sup -2] for the latter. The full width at half maximum of the symmetric (0002) x-ray diffraction peak was 69 and 160 arc sec for the Ga and N faces, respectively. That for the asymmetric (10-14) peak was 103 and 140 arc sec for Ga and N faces, respectively. The donor bound exciton linewidth as measured on the Ga and N faces (after a chemical etching to remove the damage) is about 1 meV each at 10 K. Instead of the commonly observed yellow band, this sample displayed a green band, which is centered at about 2.44 eV. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- *GALLIUM nitride
*EPITAXY
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 77
- Issue :
- 23
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4413090
- Full Text :
- https://doi.org/10.1063/1.1330563