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Projecting Lifetime of Deep Submicron MOSFETs.

Authors :
Erhong Li
Rosenbaum, Elyse
Jiang Tao
Peng Fang
Source :
IEEE Transactions on Electron Devices. Apr2001, Vol. 48 Issue 4, p671. 8p. 3 Black and White Photographs, 1 Diagram, 2 Charts, 12 Graphs.
Publication Year :
2001

Abstract

Presents information on a study which performed a detailed examination of hot-carrier-induced degradation in metal-oxide-semiconductor field-effect transistors. Experimental procedure; Results and discussion.

Subjects

Subjects :
*HOT carriers
*METAL oxide semiconductor field-effect transistors
*SCIENTIFIC experimentation

Details

Language :
English
ISSN :
00189383
Volume :
48
Issue :
4
Database :
Academic Search Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
4794192

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