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Projecting Lifetime of Deep Submicron MOSFETs.
- Source :
-
IEEE Transactions on Electron Devices . Apr2001, Vol. 48 Issue 4, p671. 8p. 3 Black and White Photographs, 1 Diagram, 2 Charts, 12 Graphs. - Publication Year :
- 2001
-
Abstract
- Presents information on a study which performed a detailed examination of hot-carrier-induced degradation in metal-oxide-semiconductor field-effect transistors. Experimental procedure; Results and discussion.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 48
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 4794192