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A Comparative Study Of Dopant Activation And Deactivation In Arsenic and Phosphorus Implanted Silicon.
- Source :
-
AIP Conference Proceedings . 1/7/2011, Vol. 1321 Issue 1, p188-191. 4p. - Publication Year :
- 2011
-
Abstract
- Comparative As and P beamline implantations were subjected to a series of low, high, low, high anneals and evaluated after each step. Following high temperature anneals, there is an increase in carrier concentration, a decrease in mobility, and an increase in the concentration of mobility scattering defects. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0094243X
- Volume :
- 1321
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- AIP Conference Proceedings
- Publication Type :
- Conference
- Accession number :
- 57288924
- Full Text :
- https://doi.org/10.1063/1.3548344