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Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs.
- Source :
-
IEEE Transactions on Electron Devices . 02/01/2011, Vol. 58 Issue 2, p460-465. 6p. - Publication Year :
- 2011
-
Abstract
- Improvement of the AlGaN/GaN high-electron mobility transistor's (HEMT's) off -state breakdown voltage is achieved by implanting ^19\F^+ ions at an energy of 50 keV and dose of \1 \times \10^12\ \cm^-2 under the gate region using \BF3 as the source. The charge state of the implanted fluorine ions changes from positive to negative in the AlGaN/GaN structure because of fluorine's strong electronegativity. The negative-charged fluorine ions at the back side of the two-dimensional electron gas can raise the energy barrier of the GaN buffer layer under the channel, effectively blocking the current injected from the source to the high-field region of the GaN channel when the HEMT is biased at off-state. The source-injected electrons, if not blocked, could flow to the high-field region and initiate a premature three-terminal off-state breakdown in a conventional AlGaN/GaN HEMT. A 38% improvement of the three-terminal off-state breakdown voltage and 40% improvement of the power figure-of-merit VBD-off^2/Ron are achieved in the enhanced back barrier HEMT. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 58
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 57542734
- Full Text :
- https://doi.org/10.1109/TED.2010.2091958