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Comparison of 4T and 6T FinFET SRAM Cells for Subthreshold Operation Considering Variability—A Model-Based Approach.
- Source :
-
IEEE Transactions on Electron Devices . 03/01/2011, Vol. 58 Issue 3, p609-616. 8p. - Publication Year :
- 2011
-
Abstract
- This paper investigates the cell stability of recently introduced four-transistor (4T) and conventional six-transistor (6T) fin-shaped field-effect transistor static random access memory (SRAM) cells operating in a subthreshold region using an efficient model-based approach to consider the impact of device variations. Compared with the 6T cell, this paper indicates that 4T SRAM cells exhibit a better nominal read static noise margin (RSNM) because of the reduced read disturb. For 4T cells, the nearly ideal values of Vwrite, 0 and Vwrite, 1 guarantee the positive nominal write static noise margin (WSNM) for selected cells. For half-selected cells on the selected bit line, a sufficient margin is observed between write time (for selected cells) and write disturb (for half-selected cells). Using the established model-based approach, the variability of subthreshold 6T and 4T SRAM cells is assessed with 1000 samples. Our results indicate that the 4T driverless cell with a larger \mu\RSNM and a slightly worse \sigma\RSNM shows a comparable \mu/\sigma ratio in RSNM with the 6T cell. Furthermore, for a given cell area, 4T SRAM cells using relaxed device dimensions with reduced \sigma\RSNM can outperform the 6T cell. For write operation, 4T SRAM cells exhibit a superior WSNM, whereas the design margin between write time and write disturb needs to be carefully examined to ensure an adequate margin considering device variability. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 58
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 58578338
- Full Text :
- https://doi.org/10.1109/TED.2010.2096225