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In situ real-time study of chemical etching process of Si(100) using light scattering.
- Source :
-
Applied Physics Letters . 7/8/1996, Vol. 69 Issue 2, p221. 3p. 2 Black and White Photographs, 1 Diagram, 2 Graphs. - Publication Year :
- 1996
-
Abstract
- We report the development of an in situ real-time light scattering technique to study the wet chemical etching process of Si(100). Based on a simple scattering theory, the number of etch pits and other statistical parameters such as correlation length and interface width on a pitted surface are extracted from the scattering profile. The time evolution of the surface morphology can be interpreted by a simple rate equation. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- *CHEMICALS
*LIGHT scattering
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 69
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 6289448
- Full Text :
- https://doi.org/10.1063/1.117378