In situ real-time study of chemical etching process of Si(100) using light scattering.

Authors :: Zhao, Y.-P.
Wu, Y.-J.
Yang, H.-N.
Wang, G.-C.
Lu, T.-M.
Source :: Applied Physics Letters. 7/8/1996, Vol. 69 Issue 2, p221. 3p. 2 Black and White Photographs, 1 Diagram, 2 Graphs.
Publication Year :: 1996
Abstract: We report the development of an in situ real-time light scattering technique to study the wet chemical etching process of Si(100). Based on a simple scattering theory, the number of etch pits and other statistical parameters such as correlation length and interface width on a pitted surface are extracted from the scattering profile. The time evolution of the surface morphology can be interpreted by a simple rate equation. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Full Text Access

Tools