Outgassing study of thin films used for poly-SiGe based vacuum packaging of MEMS

Authors :: Wang, B.
Tanaka, S.
Guo, B.
Vereecke, G.
Severi, S.
Witvrouw, A.
Wevers, M.
De Wolf, I.
Source :: Microelectronics Reliability. Sep2011, Vol. 51 Issue 9-11, p1878-1881. 4p.
Publication Year :: 2011
Abstract: Abstract: Thermal desorption spectroscopy (TDS) was used to study outgassing from polycrystalline SiGe (poly-SiGe), SiC and SiO2 films used for poly-SiGe-based MEMS thin film vacuum package technology. Primary desorption products were found to be H2, H2O and CO2. The CO2 outgassing could be correlated with CF4 plasma interface cleaning used for thick SiGe PECVD, which can leave carbon at the CF4-plasma-cleaned interface. [Copyright &y& Elsevier]

Subjects :: *MICROELECTROMECHANICAL systems
*POLYCRYSTALLINE semiconductors
*THIN films
*VACUUM
*OUTGASSING
*SILICON compounds
*INTERFACES (Physical sciences)
*SPECTRUM analysis

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