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Outgassing study of thin films used for poly-SiGe based vacuum packaging of MEMS
- Source :
-
Microelectronics Reliability . Sep2011, Vol. 51 Issue 9-11, p1878-1881. 4p. - Publication Year :
- 2011
-
Abstract
- Abstract: Thermal desorption spectroscopy (TDS) was used to study outgassing from polycrystalline SiGe (poly-SiGe), SiC and SiO2 films used for poly-SiGe-based MEMS thin film vacuum package technology. Primary desorption products were found to be H2, H2O and CO2. The CO2 outgassing could be correlated with CF4 plasma interface cleaning used for thick SiGe PECVD, which can leave carbon at the CF4-plasma-cleaned interface. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00262714
- Volume :
- 51
- Issue :
- 9-11
- Database :
- Academic Search Index
- Journal :
- Microelectronics Reliability
- Publication Type :
- Academic Journal
- Accession number :
- 65501970
- Full Text :
- https://doi.org/10.1016/j.microrel.2011.06.022