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Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM.
- Source :
-
IEEE Transactions on Electron Devices . Oct2011, Vol. 58 Issue 10, p3246-3253. 8p. - Publication Year :
- 2011
-
Abstract
- Set and reset characteristics are studied for unipolar and bipolar metal-oxide resistive-switching memory devices. We show a universal dependence of set-state resistance and reset current on the compliance current used during set, with negligible impact of metal-oxide composition and switching condition. An analytical Joule-heating model for universal reset is presented, predicting a weak dependence of reset temperature and voltage on diffusion and migration parameters in both unipolar- and bipolar-switching modes. Data for the reset voltage are shown for a wide range of unipolar and bipolar metal oxides, in support of our calculations. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 58
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 65934798
- Full Text :
- https://doi.org/10.1109/TED.2011.2161088