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Modeling Low Dose Rate Effects in Shallow Trench Isolation Oxides.

Authors :
Esqueda, Ivan S.
Barnaby, Hugh J.
Adell, Philippe C.
Rax, Bernard G.
Hjalmarson, Harold P.
McLain, Michael L.
Pease, Ronald L.
Source :
IEEE Transactions on Nuclear Science. 12/1/2011 Part 1 Part 1, Vol. 58 Issue 6, p2945-2952. 8p.
Publication Year :
2011

Abstract

Low dose rate experiments on field-oxide-field-effect-transistors (FOXFETs) fabricated in a 90 nm CMOS technology indicate that there is a dose rate enhancement factor (EF) associated with radiation-induced degradation. One dimensional (1-D) numerical calculations are used to investigate the key mechanisms responsible for the dose rate dependent buildup of radiation-induced defects in shallow trench isolation (STI) oxides. Calculations of damage EF indicate that oxide thickness, distribution of hole traps and hole capture cross-section affect dose rate sensitivity. The dose rate sensitivity of STI oxides is compared with the sensitivity of bipolar base oxides using model calculations. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISSN :
00189499
Volume :
58
Issue :
6
Database :
Academic Search Index
Journal :
IEEE Transactions on Nuclear Science
Publication Type :
Academic Journal
Accession number :
70577664
Full Text :
https://doi.org/10.1109/TNS.2011.2168569