Determination of the Poisson ratio of (001) and (111) oriented thin films of In2O3 by synchrotron-based x-ray diffraction.

Authors :: Zhang, K. H. L.
Regoutz, A.
Palgrave, R. G.
Payne, D. J.
Egdell, R. G
Walsh, A.
Collins, S. P.
Wermeille, D.
Cowley, R. A.
Source :: Physical Review B: Condensed Matter & Materials Physics. Dec2011, Vol. 84 Issue 23, p233301-1-233301-4. 4p.
Publication Year :: 2011
Abstract: The Poisson ratio ν of In2O3 has been determined by measurement of the covariation of in-plane and out-of- plane lattice parameters of strained thin films grown epitaxially on (111) and (001) oriented cubic Y-stabilized ZrO2 substrates. The experimental results are in good agreement with values for ν calculated using atomistic simulation procedures. [ABSTRACT FROM AUTHOR]

Subjects :: *POISSON'S ratio
*SYNCHROTRONS
*X-ray diffraction
*OXIDES
*PHOTOVOLTAIC power generation

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