Analysis of ordering in GaInP by means of x-ray diffraction.

Authors :: Liu, Q.
Lakner, H.
Scheffer, F.
Lindner, A.
Prost, W.
Source :: Journal of Applied Physics. 3/15/1993, Vol. 73 Issue 6, p2770. 5p. 2 Diagrams, 1 Chart, 2 Graphs.
Publication Year :: 1993
Abstract: Presents a detailed characterization of the ordered structure in silicon-doped Ga[sub0.51]In[sub0.49]P. Influence of silicon doping on the ordering in GaInP layers; Analysis of undoped layers grown at various substrate temperatures; Relationships between photoluminescence peak energy and electron concentration of silicon-doped samples at room temperature.