Strain-induced band-gap modulation in GaAs/AlGaAs quantum-well structure using thin-film stressors.

Authors :: Deng, F.
Liu, Q. Z.
Yu, L. S.
Guan, Z. F.
Lau, S. S.
Redwing, J. M.
Geisz, J.
Kuech, T. F.
Source :: Journal of Applied Physics. 2/1/1996, Vol. 79 Issue 3, p1763. 9p. 1 Chart, 9 Graphs.
Publication Year :: 1996
Abstract: Deals with a study which investigated the effect of strain-induced band-gap modulation in a GaAs/AlGaAs multiple-quantum-well structure with the wells located at various depths in the structure. Background to the study; Experimental procedures; Results and discussion.

Subjects :: *STRAINS & stresses (Mechanics)
*BAND gaps
*QUANTUM wells
*GALLIUM arsenide

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