Growth temperature dependent band alignment at the Ga0.51In0.49P to GaAs heterointerfaces.

Focuses on a study which presented a photoluminescence (PL) analysis of gallium indium phosphide/gallium arsenide single-quantum well structures grown by metal-organic vapor-phase epitaxy. Description of the sample and procedure; Estimation of the growth temperature dependent conduction and valence band discontinuity of the heterojunction; Results of x-ray diffraction measurements and simulations.