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Characterization of hydrogen passivation and carbon self-compensation of highly C-doped GaAs by means of x-ray diffraction.
- Source :
-
Journal of Applied Physics . 1/15/1996, Vol. 79 Issue 2, p710. 7p. 2 Charts, 7 Graphs. - Publication Year :
- 1996
-
Abstract
- Presents a study which examined highly carbon-doped gallium arsenide epilayers grown by low-pressure metalorganic vapor phase epitaxy using high-resolution x-ray diffraction. Information on carbon-doping; Methodology; Results.
- Subjects :
- *GALLIUM arsenide
*SEMICONDUCTOR doping
*EPITAXY
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 79
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7662312
- Full Text :
- https://doi.org/10.1063/1.360815