Back to Search
Start Over
In-situ photoluminescence monitoring of GaN in plasma exposure.
- Source :
-
Applied Physics Letters . 8/13/2012, Vol. 101 Issue 7, p071105-071105-4. 1p. 4 Graphs. - Publication Year :
- 2012
-
Abstract
- We have investigated in-situ photoluminescence properties of GaN surfaces exposed to Ar plasma. With increasing plasma exposure time, both intensities of near-band-edge (NBE) peak and yellow band luminescence (YL) significantly decrease, whereas that of blue band luminescence (BL) is seen to gradually increase. Additionally, the YL/NBE intensity ratio is almost invariant, but the BL/NBE intensity ratio increases dramatically with increasing the plasma exposure time. The results suggest that the increase in the BL intensity is probably due to the plasma-induced damage accumulation and the in-situ monitoring of the BL/NBE intensity ratio can be used to observe the plasma-induced damage. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 101
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 79119958
- Full Text :
- https://doi.org/10.1063/1.4745917