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Preparation of the c-axis oriented AlN film by laser chemical vapor deposition using a newly proposed Al(acac)3 precursor
- Source :
-
Journal of Crystal Growth . Feb2013, Vol. 365, p1-5. 5p. - Publication Year :
- 2013
-
Abstract
- Abstract: Highly oriented AlN film was prepared on a c-plane sapphire substrate by laser chemical vapor deposition using a newly proposed aluminum acetylacetonate precursor and ammonia gas as source reactants. The c-axis oriented AlN films were obtained on the c-plane sapphire substrate at deposition temperatures from 900 to 1230K. AlN film prepared at 1047K showed an epitaxial relation as The full width at half maximum (FWHM) of the X-ray rocking curve for AlN (0002) plane increased with increasing deposition temperature. The c-axis lattice parameter decreased with increasing deposition temperature. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 365
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 85282918
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2012.12.034