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Reaction kinetics in silicon chemical vapor deposition
- Source :
-
Current Opinion in Solid State & Materials Science . Oct2002, Vol. 6 Issue 5, p479. 7p. - Publication Year :
- 2002
-
Abstract
- Gas-phase reactions of simple silicon hydride species underlying many types of chemical vapor deposition processes for silicon-based thin-film growth are reviewed in this paper. Mass spectrometry and laser-based spectroscopy are applied to identify gas-phase intermediates in thermal and hot-wire chemical vapor deposition processes. The mechanism of the thermal decomposition of silanes, including reactions that lead to the formation of hydrogenated silicon clusters, is examined. The gas-phase chemical kinetic mechanism in hot-wire chemical vapor deposition is proposed to explain precursor molecules for the film growth. [Copyright &y& Elsevier]
- Subjects :
- *CHEMICAL vapor deposition
*SILICON
*THIN films
Subjects
Details
- Language :
- English
- ISSN :
- 13590286
- Volume :
- 6
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Current Opinion in Solid State & Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 8578815
- Full Text :
- https://doi.org/10.1016/S1359-0286(02)00078-5