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Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study.
- Source :
-
Applied Physics Letters . 12/23/2002, Vol. 81 Issue 26, p4970. 3p. 3 Graphs. - Publication Year :
- 2002
-
Abstract
- Photoluminescence of the dominant deep-level acceptor in high-purity freestanding GaN is studied over a wide range of excitation intensities. A yellow luminescence (YL) band at about 2.2 eV saturates with increasing excitation intensity, whereas a green luminescence (GL) band at about 2.5 eV increases as a square of the excitation intensity. The YL and GL bands are attributed to two charge states of the same defect, presumably a gallium vacancy-oxygen complex. [ABSTRACT FROM AUTHOR]
- Subjects :
- *GALLIUM nitride
*PHOTOLUMINESCENCE
*ENERGY levels (Quantum mechanics)
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 81
- Issue :
- 26
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 8691546
- Full Text :
- https://doi.org/10.1063/1.1531227