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Investigation of ZnO thin films deposited on ferromagnetic metallic buffer layer by molecular beam epitaxy toward realization of ZnO-based magnetic tunneling junctions.
- Source :
-
Journal of Applied Physics . May2013, Vol. 113 Issue 17, p17C106-17C106-3. 1p. - Publication Year :
- 2013
-
Abstract
- Deposition of ZnO thin films on a ferromagnetic metallic buffer layer (Co3Pt) by molecular beam epitaxy technique was investigated for realization of ZnO-based magnetic tunneling junctions with good quality hexagonal ZnO films as tunnel barriers. For substrate temperature of 600 °C, ZnO films exhibited low oxygen defects and high electrical resistivity of 130 Ω cm. This value exceeded that of hexagonal ZnO films grown by sputtering technique, which are used as tunnel barriers in ZnO-MTJs. Also, the effect of oxygen flow during deposition on epitaxial growth conditions and Co3Pt surface oxidation was discussed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 113
- Issue :
- 17
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 87497531
- Full Text :
- https://doi.org/10.1063/1.4794875